• DocumentCode
    1076014
  • Title

    VA-2 charge injection over barriers in unipolar semiconductor structures

  • Author

    Luryi, S. ; Kazarinov, R.F.

  • Volume
    28
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1242
  • Lastpage
    1243
  • Keywords
    Doping profiles; Electrons; FETs; Gallium arsenide; Geometry; MESFETs; Metallization; Schottky diodes; Semiconductor diodes; Thermionic emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20567
  • Filename
    1481719