Title :
VA-2 charge injection over barriers in unipolar semiconductor structures
Author :
Luryi, S. ; Kazarinov, R.F.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Doping profiles; Electrons; FETs; Gallium arsenide; Geometry; MESFETs; Metallization; Schottky diodes; Semiconductor diodes; Thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20567
