Extreme Value Statistics in Silicon Photonics

Author

Borlaug, D. ; Fathpour, S. ; Jalali, B.

Author_Institution

Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA

Volume

1

Issue

1

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

33

Lastpage

39

Abstract

L-shape probability distributions are extremely non-Gaussian functions that have been surprisingly successful in describing the occurrence of extreme events ranging from stock market crashes, natural disasters, structure of biological systems, fractals, and optical rogue waves. We show that fluctuations in stimulated Raman scattering, as well as in coherent anti-Stokes Raman scattering, in silicon can follow extreme value statistics and provide mathematical insight into the origin of this behavior.

Keywords

coherent antiStokes Raman scattering; integrated optics; photonic band gap; statistical distributions; L-shape probability distributions; coherent anti-Stokes Raman scattering; extreme value statistics; silicon photonics; stimulated Raman scattering; Biological systems; Computer crashes; Photonics; Probability distribution; Raman scattering; Silicon; Statistical distributions; Statistics; Stock markets; Ultraviolet sources; Extreme value statistics; L-shape probability distribution; Raman scattering; silicon photonics;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2009.2025517

Filename

5075654