VIA-4 high-quality MOSFETs on silicon films prepared by zone melting recrystallization of encapsulated polysilicon on SiO2

Author

Geis, M.W. ; Fan, J.C.C. ; Silversmith, D.J. ; Mountain, R.W. ; Donnelly, J.P. ; Antoniadis, Dimitri A.

Volume

Issue

fYear

1981

fDate

10/1/1981 12:00:00 AM

Firstpage

1255

Lastpage

1256

Keywords

Annealing; Electron mobility; Epitaxial growth; Fabrication; Laser beams; MOSFETs; Power lasers; Semiconductor films; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1981.20584

Filename

1481736

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