DocumentCode :
1076187
Title :
VIA-4 high-quality MOSFETs on silicon films prepared by zone melting recrystallization of encapsulated polysilicon on SiO
2
Author :
Geis, M.W. ; Fan, J.C.C. ; Silversmith, D.J. ; Mountain, R.W. ; Donnelly, J.P. ; Antoniadis, Dimitri A.
Volume :
28
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
1255
Lastpage :
1256
Keywords :
Annealing; Electron mobility; Epitaxial growth; Fabrication; Laser beams; MOSFETs; Power lasers; Semiconductor films; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20584
Filename :
1481736
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1076187
