Title :
VIA-5 deep levels in ion-implanted Si after beam annealing
Author :
Sheng, N.H. ; Mizuta, M. ; Merz, J.L.
fDate :
10/1/1981 12:00:00 AM
Keywords :
Annealing; Contacts; Electron traps; Ion beams; Ion implantation; Laser beams; Optical materials; Power lasers; Spectroscopy; Thermal force;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20586
