Title :
VIA-7 amorphous silicon FET with Schottky contacts
fDate :
10/1/1981 12:00:00 AM
Keywords :
Amorphous silicon; Annealing; Dielectric substrates; Electrodes; FETs; Glass; Glow discharges; MOSFETs; Schottky barriers; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20587
