DocumentCode :
1076228
Title :
1.3- 
m GaNAsSb–GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links
Author :
Fedderwitz, S. ; Stöhr, A. ; Tan, K.H. ; Yoon, S.F. ; Weiss, Michael ; Poloczek, A. ; Loke, W.K. ; Wicaksono, S. ; Ng, T.K. ; Rymanov, V. ; Patra, A. ; Tangdiongga, E. ; Jäger, D.
Author_Institution :
Zentrum fur Halbleitertechnik und Optoelektron., Univ. Duisburg-Essen, Duisburg
Volume :
21
Issue :
13
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
911
Lastpage :
913
Abstract :
We report on 10 gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3 mum wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate. With an optical bandgap of ~0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off frequency of the non-antireflection-coated PD at 1.3-mu m wavelength are 0.35 A/W and 14 GHz, respectively. Using this GaAs-based GaNAsSb PD, an error-free (bit-error rate=10-12 ) transmission of 10-Gb Ethernet data at 1.3-mu m wavelength is successfully demonstrated.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; high-speed optical techniques; nitrogen compounds; optical fibre LAN; optical materials; photodetectors; photonic band gap; Ethernet link; GaAs; GaNAsSb-GaAs; UTC-photodetector; fiber-optic transmission; frequency 14 GHz; high-speed uni-travelling-carrier photodetector; near-infrared operation; nonantireflection-coating; optical bandgap; wavelength 1.3 mum; wavelength 1380 nm; Data communication; Doping; Frequency response; Gallium arsenide; Lighting; Metallization; Radio frequency; Scanning electron microscopy; Voltage; Wavelength measurement; 1.3-$muhbox{m}$
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2020302
Filename :
5075728
Link To Document :
