• DocumentCode
    1076452
  • Title

    Photonic Properties of Er-Doped Crystalline Silicon

  • Author

    Vinh, Nguyen Quang ; Ha, Ngo Ngoc ; Gregorkiewicz, Tom

  • Author_Institution
    Van der Waals-Zeeman Inst., Univ. of Amsterdam, Amsterdam
  • Volume
    97
  • Issue
    7
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    1269
  • Lastpage
    1283
  • Abstract
    During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.
  • Keywords
    elemental semiconductors; erbium; multilayers; nanostructured materials; photoluminescence; semiconductor doping; silicon; Si:Er; doping; multinanolayer structures; optical properties; photoluminescence; photonic properties; semiconductors; Atom optics; CMOS technology; Crystallization; Erbium; Indium phosphide; Optical interconnections; Particle beam optics; Photonic crystals; Silicon; Stimulated emission; Erbium; excitation; luminescence; nanolayers; optical gain; photonic; radiative recombination; rare earth; silicon; terahertz; two-color spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2009.2018220
  • Filename
    5075751