• DocumentCode
    1076470
  • Title

    Electron-beam lithography for small MOSFET´s

  • Author

    Watts, Roderick Kent ; Fichtner, Wolfgang ; Fuls, E.N. ; Thibault, Louis R. ; Johnston, Ralph L.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    28
  • Issue
    11
  • fYear
    1981
  • fDate
    11/1/1981 12:00:00 AM
  • Firstpage
    1338
  • Lastpage
    1345
  • Abstract
    Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and submicrometer channel lengths. Results for transistors and ring oscillators are reported.
  • Keywords
    Amorphous silicon; Coordinate measuring machines; Electron beams; Etching; Lithography; MOS devices; MOSFETs; Resists; Surfaces; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1981.20611
  • Filename
    1481763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076470