DocumentCode
1076637
Title
Simulation of an optimized electron-beam lithographic process
Author
Chang, Tong Symon ; Codella, Christopher F. ; Lange, Russell C.
Author_Institution
IBM Research Laboratory, San Jose, CA
Volume
28
Issue
11
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
1428
Lastpage
1435
Abstract
A methodology is developed to define design ground rules for an electron-beam direct write lithographic process for very high density circuits, using a computer simulation program to quantify the tradeoffs among various resist process variables for 1.5-µm minimum feature sizes. An iterative procedure is used to obtain a set of coefficients for a proximity correction algorithm which minimizes the pattern-dependent linewidth variations. Finally, the total linewidth tolerance for this technology is estimated.
Keywords
Computer simulation; Electron beams; Electron devices; Lithography; Notice of Violation; Physics; Production; Proximity effect; Resists; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1981.20626
Filename
1481778
Link To Document