DocumentCode
1076684
Title
Fabrication and Transport Properties for Cleaved Thin Film BSCCO Single Crystals
Author
Yamada, Yoshiharu ; Watanabe, Takao ; Suzuki, Minoru
Author_Institution
Kyoto Univ., Kyoto
Volume
17
Issue
2
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
3533
Lastpage
3536
Abstract
We have fabricated truly single-crystal BSCCO thin films of the quality of traveling-solvent-floating-zone single crystals by using a double side cleaving technique. The thicknesses of the cleaved thin films thus obtained ranges from 20 nm to 100 nm. These films are found to adsorb or desorb oxygen very easily at a relatively low annealing temperature of 200 to 300degC. When a cleaved film is annealed in Argon at 300degC for 10 min, it changes to an insulator without any trace of superconducting transition. When this film is subsequently annealed in oxygen at 300degC , it exhibits a sharp superconducting transition at about 90 K. When the film is subjected to these process repeatedly, the film changes from an insulator to a superconductor quite reversibly. We have measured in-plane resistivity and the Hall coefficient systematically in a wide doping range for this thin film BSCCO single crystals.
Keywords
Hall effect; adsorption; annealing; bismuth compounds; calcium compounds; desorption; doping; high-temperature superconductors; liquid phase deposition; strontium compounds; superconducting thin films; superconducting transitions; BiSrCaCuO; Hall coefficient; adsorption; annealing temperature; desorption; doping; double side cleaving technique; film thickness; insulator-superconductor transition; single-crystal BSCCO thin films; size 20 nm to 100 nm; temperature 200 degC to 300 degC; time 10 min; traveling-solvent-floating-zone method; Annealing; Argon; Bismuth compounds; Conductivity; Crystals; Fabrication; Gas insulation; Superconducting films; Temperature; Transistors; Bi-based superconductor; doping dependence; excess oxygen; transport properties;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2007.899574
Filename
4278328
Link To Document