Title :
Ku-band flat-profile Si-IMPATT diodes with 10-percent efficiency
Author :
Leistner, D. ; Freyer, J.
Author_Institution :
Technische Universität München, München, Federal Republic of Germany
fDate :
12/1/1981 12:00:00 AM
Abstract :
The fabrication of n-type high-efficiency Si flat-profile IMPATT diodes for Ku-band frequencies is described. By variation of the length of the undepleted region, the use of low ohmic contacts, and the reduction of the substrate thickness an efficiency of more than 10 percent could be obtained.
Keywords :
Diodes; Etching; Fabrication; Frequency; Gallium arsenide; Gold; Ohmic contacts; Packaging; Substrates; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1981.20644
