DocumentCode :
1076821
Title :
Influence of the junction area to edge area ratio on the open-circuit voltage of silicon solar cells
Author :
Cuevas, A. ; Eguren, J. ; Sanchez, E. ; Cid, M.
Author_Institution :
Universidad Politécnica de Madrid, Ciudad Universitaria, Madrid, Spain
Volume :
28
Issue :
12
fYear :
1981
fDate :
12/1/1981 12:00:00 AM
Firstpage :
1554
Lastpage :
1555
Abstract :
This work shows experimentally the decrease in open-circuit voltage produced by edge recombination in silicon solar cells. The effect is related to the edge area to junction area ratio.
Keywords :
Loss measurement; Photovoltaic cells; Power generation; Semiconductor diodes; Silicon; Substrates; Temperature; Thermal factors; Thermal resistance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1981.20645
Filename :
1481797
Link To Document :
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