Title :
Smart grid technologies
Author :
Wang, Jun ; Huang, Alex Q. ; Sung, Woongje ; Liu, Yu ; Baliga, B.Jayant
Author_Institution :
North Carolina State Univ., Raleigh, NC
fDate :
6/1/2009 12:00:00 AM
Abstract :
The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.
Keywords :
insulated gate bipolar transistors; power integrated circuits; power semiconductor devices; IGBT; SiC; high-frequency operation; high-temperature operation; high-voltage operation; military applications; power conversion; power semiconductor devices; smart grid technologies; voltage 15 kV; Energy storage; Insulated gate bipolar transistors; MOSFETs; Power electronics; Secure storage; Silicon carbide; Smart grids; Switching frequency; Temperature; Voltage;
Journal_Title :
Industrial Electronics Magazine, IEEE
DOI :
10.1109/MIE.2009.932583
