DocumentCode :
1076864
Title :
III-V alloy heterostructure high speed avalanche photodiodes
Author :
Law, H. David ; Nakano, Kenichi ; Tomasetta, Louis R.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, CA, USA
Volume :
15
Issue :
7
fYear :
1979
fDate :
7/1/1979 12:00:00 AM
Firstpage :
549
Lastpage :
558
Abstract :
Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 
m. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given.
m. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given.Keywords :
Avalanche photodiodes; Bibliographies; Gallium materials/devices; Infrared detectors; Avalanche photodiodes; Dark current; Diodes; Fiber lasers; Gallium arsenide; Germanium alloys; III-V semiconductor materials; Laser noise; Pulse measurements; Silicon;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070061
Filename :
1070061
Link To Document :
