• DocumentCode
    1076884
  • Title

    Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasers

  • Author

    Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masahito ; Nishi, Hidetaka ; Takusagawa, M.

  • Author_Institution
    Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki, Japan
  • Volume
    15
  • Issue
    7
  • fYear
    1979
  • fDate
    7/1/1979 12:00:00 AM
  • Firstpage
    571
  • Lastpage
    579
  • Abstract
    Threshold characteristics of stripe-geometry InGaAsP/InP double-heterostructure injection lasers have been analytically derived as a function of active layer thickness and stripe width. The effects of stripe width, refractive index in the active layer, diffusion of injected carriers, carrier lifetime, absorption loss in the cladding layer, gain coefficient, and cavity length on the optimum thickness of the active layer which gives minimum threshold or on threshold current density were studied. These lasers were fabricated on
  • Keywords
    Absorption; Charge carrier lifetime; DH-HEMTs; Fiber lasers; Indium phosphide; Laser theory; Optical fiber communication; Refractive index; Silicon compounds; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1070063
  • Filename
    1070063