DocumentCode
1076884
Title
Theoretical and experimental study of threshold characteristics in InGaAsP/InP DH lasers
Author
Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masahito ; Nishi, Hidetaka ; Takusagawa, M.
Author_Institution
Fujitsu Laboratories, Ltd., Nakahara-ku, Kawasaki, Japan
Volume
15
Issue
7
fYear
1979
fDate
7/1/1979 12:00:00 AM
Firstpage
571
Lastpage
579
Abstract
Threshold characteristics of stripe-geometry InGaAsP/InP double-heterostructure injection lasers have been analytically derived as a function of active layer thickness and stripe width. The effects of stripe width, refractive index in the active layer, diffusion of injected carriers, carrier lifetime, absorption loss in the cladding layer, gain coefficient, and cavity length on the optimum thickness of the active layer which gives minimum threshold or on threshold current density were studied. These lasers were fabricated on
Keywords
Absorption; Charge carrier lifetime; DH-HEMTs; Fiber lasers; Indium phosphide; Laser theory; Optical fiber communication; Refractive index; Silicon compounds; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1070063
Filename
1070063
Link To Document