• DocumentCode
    1076885
  • Title

    Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control

  • Author

    Barnard, Joseph ; Ohno, Hideo ; Wood, Colin E.C. ; Eastman, Lester F.

  • Author_Institution
    Cornell University, Ithaca, New York
  • Volume
    2
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga0.47In0.53As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter Of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.
  • Keywords
    DH-HEMTs; Gain control; High speed optical techniques; Indium phosphide; MESFETs; Molecular beam epitaxial growth; Optical fiber losses; Photoconductivity; Photodetectors; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25320
  • Filename
    1481804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076885