Title :
Delayed secondary avalanche effects in millimeter wave GaAs IMPATT diodes
Author :
Thoren, G.R. ; Dalman, G.C. ; Lee, C.A.
Author_Institution :
Cornell University, Ithaca, NY, USA
fDate :
1/1/1981 12:00:00 AM
Abstract :
A simulation of the large signal operation of GaAs millimeter wave IMPATTs shows that a high peak current density of electrons (often in excess of 25KA/cm2) will lead to a delayed secondary avalanche (DSA) in the drift zone. These DSA effects have been simulated and correlated with experimental observations and are a determining factor in achieving high power and high efficiency in GaAs IMPATTs at 40 GHz and above.
Keywords :
Charge carrier processes; Computer simulation; Delay effects; Diodes; Doping profiles; Electrons; Gallium arsenide; Poisson equations; Propagation delay; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25321
