• DocumentCode
    1076904
  • Title

    Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs

  • Author

    Judaprawira, S. ; Wang, W.I. ; Chao, P.C. ; Wood, C.E.C. ; Woodard, D.W. ; Eastman, L.F.

  • Author_Institution
    Cornell University, Ithaca, NY, USA
  • Volume
    2
  • Issue
    1
  • fYear
    1981
  • fDate
    1/1/1981 12:00:00 AM
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    Modulation-doped GaAs/n-Al0.3Ga0.7As MESFETs have been fabricated. At 77 K, DC transconductance of 160 mS mm-1was observed, which is the highest transconductance value ever reported in this type of structure. The intrinsic transconductance was calculated to be 350 mSmm-1, and the corresponding average electron drift velocity is 1.8 × 107cm s-1, which demonstrates the real advantage of this type of device in high-speed applications.
  • Keywords
    Current-voltage characteristics; Electron mobility; Epitaxial layers; Gallium arsenide; Gold; MESFETs; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25322
  • Filename
    1481806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076904