Title :
Ferromagnetic ultra-small tunnel junction devices fabricated by scanning probe microscope (SPM) local oxidation
Author :
Shirakashi, Jun-ichi ; Takemura, Yasushi
Author_Institution :
Dept. of Electron. & Inf. Syst., Akita Prefectural Univ., Japan
fDate :
7/1/2004 12:00:00 AM
Abstract :
A novel lithography technique for fabricating ferromagnetic metal/insulator/ferromagnetic metal (FM/I/FM)-based nanoscale devices was investigated using a scanning probe microscope (SPM) local oxidation process. This technique was applied to the surface modification of Ni thin films. Planar-type Ni/Ni oxide/Ni-based diodes and ferromagnetic single-electron transistor (FMSET) structures were fabricated by SPM local oxidation. Ni-based diodes clearly showed nonlinear current-voltage (I-V) characteristics, and capacitively coupled FMSET structures with a Ni-based double ferromagnetic tunnel junction exhibited Coulomb blockade effects.
Keywords :
Coulomb blockade; ferromagnetic materials; ferromagnetic-antiferromagnetic transitions; magnetic thin film devices; magnetic tunnelling; magnetoresistive devices; nanolithography; oxidation; scanning probe microscopy; Coulomb blockade effects; Ni thin films; Ni-based diodes; SPM local oxidation; capacitively coupled FMSET; ferromagnetic device fabrication; ferromagnetic devicess; ferromagnetic metal-insulator; ferromagnetic single-electron transistor; ferromagnetic tunnel junction; lithography; magnetic thin-film devices; magnetoresistive devices; nanoscale devices; nanotechnology; nonlinear current-voltage characteristics; scanning probe microscope; thin film surface modification; ultra-small tunnel junction devices; Atomic force microscopy; Diodes; Lithography; Metal-insulator structures; Nickel; Optical device fabrication; Oxidation; Scanning probe microscopy; Transistors; Voltage; Magnetic thin-film devices; magnetoresistive devices; nanotechnology; tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2004.829166
