Title :
N-Channel MOSFETs with WSi2gate
Author :
Mohammadi, Farrokh ; Saraswat, Krishna C.
Author_Institution :
National Semiconductor, Santa Clara, CA, USA
fDate :
2/1/1981 12:00:00 AM
Abstract :
Tungsten silicide gate depletion- and enhancement-mode NMOS transistors were fabricated. The transistor characteristics revealed the excellent compatability of WSi2as gate electrode for MOS integrated circuits. Electron mobility of channel at saturation were found to be 210 cm2/v sec for enhancement-mode transistor and 110 cm2/v sec for depletion-mode transistor.
Keywords :
Boron alloys; Electrodes; Electron mobility; Fabrication; Implants; Inverters; MOSFETs; Silicides; Silicon; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25326
