Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching

Author

Kong, Soon Tat ; Ngwendson, Luther-King ; Sweet, Mark ; Kumar, Dinesh ; Narayanan, Ekkanath Madathil Sankara

Author_Institution

Univ. of Sheffield, Sheffield

Volume

24

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

1100

Lastpage

1106

Abstract

For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, A nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the dlldt, dV/dt, and turn-off energy loss of the device. Experimental results are shown at 25degC and 125degC. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.

Keywords

insulated gate bipolar transistors; power semiconductor switches; power transistors; current 25 A; inductive load switching; nonpunch-through clustered insulated gate bipolar transistor; power semiconductor devices; power semiconductor switches; power transistors; voltage 1.2 kV; Power semiconductor devices; power semiconductor switches; power transistors;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2008.2007794

Filename

4757280