Title :
Turn-Off Behavior of 1.2 kV/25 A NPT-CIGBT Under Clamped Inductive Load Switching
Author :
Kong, Soon Tat ; Ngwendson, Luther-King ; Sweet, Mark ; Kumar, Dinesh ; Narayanan, Ekkanath Madathil Sankara
Author_Institution :
Univ. of Sheffield, Sheffield
fDate :
4/1/2009 12:00:00 AM
Abstract :
For the first time, this paper analyzes the turn-off behavior of the planar 1.2 kV/25, A nonpunch-through clustered insulated gate bipolar transistor (NPT-CIGBT) under clamped inductive load switching, in detail and through experiment simulation. Turn-off behavior of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied in order to observe the dlldt, dV/dt, and turn-off energy loss of the device. Experimental results are shown at 25degC and 125degC. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power transistors; current 25 A; inductive load switching; nonpunch-through clustered insulated gate bipolar transistor; power semiconductor devices; power semiconductor switches; power transistors; voltage 1.2 kV; Power semiconductor devices; power semiconductor switches; power transistors;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2008.2007794
