• DocumentCode
    1076961
  • Title

    A sub-nanosec, oxide isolated ISL technology

  • Author

    Roberts, P.C.T. ; Lamb, D.R. ; Belt, R. ; Bostick, D. ; Pai, S. ; Burbank, D.

  • Author_Institution
    Honeywell, Systems and Research Center, Minneapolis, Minnesota
  • Volume
    2
  • Issue
    2
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    An oxide isolated Integrated Schottky Logic (ISL) gate has been designed and fabricated using 1.25 µm minimum goemetries and a 1 µm thick epitaxy layer. Computer simulations and experimental results show good agreement and demonstrate that this gate structure provides a room temperative gate delay of approximately 0.7ns at a current level of 100 µA.
  • Keywords
    Belts; Clamps; Current measurement; Delay; Epitaxial layers; Isolation technology; Logic; Power supplies; Resistors; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25328
  • Filename
    1481812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1076961