• DocumentCode
    1077090
  • Title

    On the relation between threshold current and interface recombination velocities in double-heterojunction lasers

  • Author

    van Opdorp, C. ; Veenvliet, H.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • Volume
    15
  • Issue
    8
  • fYear
    1979
  • fDate
    8/1/1979 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    821
  • Abstract
    In a light-emitting double-heterojunction structure, interface recombination reduces the quantum efficiency of spontaneous emission \\eta ; more specifically, in a double-heterojunction laser this increases the threshold current density Jth. Simplified expressions are derived here for the dependence of \\eta and Jthon interface recombination velocities in the injection regimes of both n \\ll p (or p \\ll n ) and p = n . Easy-to-handle criteria are presented for checking the validity of the simplifications when using these expressions for evaluating the recombination velocities from experimental data.
  • Keywords
    Charge carrier processes; Semiconductor lasers; Carrier confinement; Charge carriers; Differential equations; Nonlinear equations; Nonlinear optics; Radiative recombination; Spontaneous emission; Stimulated emission; Threshold current; Writing;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1979.1070081
  • Filename
    1070081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077090