Title :
Design and characterization of the BVX: an 8-channel CMOS preamplifier-shaper for silicon strips
Author :
Britton, C.L., Jr. ; Alley, G.T. ; Simpson, M.L. ; Wintenberg, A.L. ; Yarema, R.J. ; Zimmerman, T. ; Boissevain, J. ; Collier, W. ; Jacak, B.V. ; Simon-Gillo, J. ; Sondheim, W. ; Sullivan, J.P. ; Lockyer, N.
Author_Institution :
Oak Ridge Nat. Lab., TN, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of ±50 ns. The circuit has a pitch (width) of 85 μm/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 μm p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements
Keywords :
CMOS integrated circuits; detector circuits; nuclear electronics; position sensitive particle detectors; preamplifiers; semiconductor counters; 1 to 20 pF; 1.2 mW; 150 to 250 ns; 2 mum; 8-channel CMOS preamplifier-shaper; BVX; Si; Si strip detectors; p-wells CMOS; peaking time; Capacitance; Circuit noise; Crosstalk; Detectors; Laboratories; MOS devices; Power dissipation; Preamplifiers; Silicon; Strips;
Journal_Title :
Nuclear Science, IEEE Transactions on
