• DocumentCode
    1077146
  • Title

    Inversion-mode insulated gate Ga0.47In0.53As field-effect transistors

  • Author

    Wieder, H.H. ; Clawson, A.R. ; Elder, D.I. ; Collins, D.A.

  • Author_Institution
    Naval Ocean Systems Center, San Diego, California
  • Volume
    2
  • Issue
    3
  • fYear
    1981
  • fDate
    3/1/1981 12:00:00 AM
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    It is demonstrated that inversion-mode n-channel insulated gate field-effect transistors can be made of p-type heteroepitaxially-grown Ga0.47In0.53As layers on semi-insulating InP.
  • Keywords
    Dielectrics; Epitaxial layers; FETs; Indium phosphide; Insulation; Ocean temperature; Plasma temperature; Silicon alloys; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25345
  • Filename
    1481829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077146