Title :
Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX
Author :
Ohtou, Tetsu ; Sugii, Nobuyuki ; Hiramoto, Toshiro
Author_Institution :
Tokyo Univ., Tokyo
Abstract :
Characteristic variations of fully depleted silicon-on-insulator (SOI) MOSFETs with extremely thin buried oxide are examined by device simulations. It is found, for the first time, that a SOI device with low channel impurity concentration and high substrate concentration has high immunity to both parameter variations and random dopant fluctuations (RDFs). Fully depleted (FD) silicon-on-insulator (SOI) MOSFET, random dopant fluctuation (RDF), thin buried oxide (BOX), variability.
Keywords :
MOSFET; silicon-on-insulator; substrates; buried oxide; channel impurity concentration; fully depleted SOI MOSFET; parameter variations; random dopant fluctuations; substrate concentration; Doping; Educational technology; Fluctuations; Government; Impurities; MOSFETs; Resource description framework; Silicon on insulator technology; Size control; Substrates; Fully depleted (FD) silicon-on-insulator (SOI) MOSFET; random dopant fluctuation (RDF); thin buried oxide (BOX); variability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.901276
