DocumentCode :
1077204
Title :
On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors
Author :
Darken, L.
Author_Institution :
Oxford Instrum., Oak Ridge, TN
Volume :
41
Issue :
1
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
394
Lastpage :
395
Abstract :
The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood
Keywords :
carrier density; defect electron energy states; dislocation etching; electron traps; elemental semiconductors; germanium; measurement standards; semiconductor counters; Ge; Ge crystals; capacitance transient techniques; carrier type; crystallography; etching; high-purity; measurement standard; net carrier concentration; radiation detectors; semiconductor; trapping levels; van der Pauw method; ANSI standards; Capacitance measurement; Crystallography; Crystals; Etching; Germanium; Measurement standards; Nuclear Instruments - n42; Radiation detectors; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.281529
Filename :
281529
Link To Document :
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