Steep profile resist patterns through 1:1 deep UV projection printing

Steep profile resist patterns of 1 µm lines and 1 µm spaces are delineated by 1:1 projection printing using a novel, deep uv, negative resist. Strong absorption of deep uv light and the absence of swelling caused by the developer contribute to the high resolution of the resist. The sensitivity is adequate and the optimum scanning exposure time for a 4 inch wafer is about one minute. The processing procedure is the same as that for conventional photolithography.