Title :
High-Voltage Self-Aligned p-Channel DMOS-IGBTs in 4H-SiC
Author :
Sui, Y. ; Wang, X. ; Cooper, J.A.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
SiC power MOSFETs designed for blocking voltages of 10 kV and higher face the problem of high drift layer resistance that gives rise to a high internal power dissipation in the ON -state. For this reason, the ON-state current density must be severely restricted to keep the power dissipation below the package limit. We have designed, optimized, and fabricated high-voltage SiC p-channel doubly-implanted metal-oxide-semiconductor insulated gate bipolar transistors (IGBTs) on 20-kV blocking layers for use as the next generation of power switches. These IGBTs exhibit significant conductivity modulation in the drift layer, which reduces the ON-state resistance. Assuming a 300 W/cm2 power package limit, the maximum currents of the experimental IGBTs are 1.2x and 2.1x higher than the theoretical maximum current of a 20-kV MOSFET at room temperature and 177 degC, respectively.
Keywords :
current density; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; ON-state resistance; SiC - Interface; conductivity modulation; current density; doubly-implanted metal-oxide-semiconductor; drift layer resistance; high-voltage self-aligned p-channel DMOS-IGBT; insulated gate bipolar transistors; internal power dissipation; power MOSFET; power dissipation; power switches; temperature 77 degC; voltage 10 kV; voltage 20 kV; Conductivity; Current density; Design optimization; Insulated gate bipolar transistors; MOSFETs; Packaging; Power dissipation; Silicon carbide; Temperature; Voltage; High temperature; high voltage; insulated gate bipolar transistors (IGBTs); power transistors; silicon carbide; wide bandgap;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.901582
