• DocumentCode
    1077296
  • Title

    Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices

  • Author

    Simmons, J.G. ; Faraone, L. ; Mishra, U.K. ; Hsueh, F.-L.

  • Author_Institution
    University of Bradford, Bradford, England
  • Volume
    2
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    An experimental study is presented which determines the switching criterion for metal/tunnel-oxide/n/p+devices. The D.C. characteristics obtained from isolated devices fabricated on two batches of substantially different substrates, but having identical tunnel-oxides, suggest that the switching current is almost completely determined by the characteristics of the tunnel-oxide. Physical arguments are presented which adequately explain the experimental results.
  • Keywords
    Conductivity; Doping; Feedback; Laboratories; Low voltage; Metal-insulator structures; Neodymium; Silicon; Substrates; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25361
  • Filename
    1481845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077296