• DocumentCode
    1077329
  • Title

    Direct-coupled logic operation of GaAs column gate FET

  • Author

    Ishii, Y. ; Asai, K. ; Ino, M. ; Kobayashi, M. ; Kurumada, K.

  • Author_Institution
    Nippon Telegraph & Telephone Public Corporation, Tokyo, Japan
  • Volume
    2
  • Issue
    5
  • fYear
    1981
  • fDate
    5/1/1981 12:00:00 AM
  • Firstpage
    118
  • Lastpage
    120
  • Abstract
    A ring oscillator operation is demonstrated employing normally-off 2 µm diameter column gate FET with 145 ps/gate delay time and with 64 fJ power-delay product. Delay time is discussed in terms of CR time constant comparison between MES and column structure. The column gate FET can realize much smaller "on" resistance comparing with MESFET.
  • Keywords
    Capacitance; Chromium; Delay effects; FETs; Gallium arsenide; Inverters; Logic; Propagation delay; Resists; Ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25364
  • Filename
    1481848