DocumentCode
1077329
Title
Direct-coupled logic operation of GaAs column gate FET
Author
Ishii, Y. ; Asai, K. ; Ino, M. ; Kobayashi, M. ; Kurumada, K.
Author_Institution
Nippon Telegraph & Telephone Public Corporation, Tokyo, Japan
Volume
2
Issue
5
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
118
Lastpage
120
Abstract
A ring oscillator operation is demonstrated employing normally-off 2 µm diameter column gate FET with 145 ps/gate delay time and with 64 fJ power-delay product. Delay time is discussed in terms of CR time constant comparison between MES and column structure. The column gate FET can realize much smaller "on" resistance comparing with MESFET.
Keywords
Capacitance; Chromium; Delay effects; FETs; Gallium arsenide; Inverters; Logic; Propagation delay; Resists; Ring oscillators;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25364
Filename
1481848
Link To Document