• DocumentCode
    1077513
  • Title

    P-N junction and Schottky barrier diode fabrication in laser recrystallized polysilicon on SiO2

  • Author

    Shah, R.R. ; Hollingsworth, D.R. ; DeJong, G.A. ; Crosthwait, D.L. ; Crosthwait, D.L.

  • Author_Institution
    Texas Instruments Inc., Dallas, Texas
  • Volume
    2
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    159
  • Lastpage
    161
  • Abstract
    P-N junction and Schottky barrier diodes have been fabricated in laser recrystallized polycrystalline silicon on SiO2. A repetitively Q-switched Nd3+:YAG laser was used to anneal polysilicon deposited by LPCVD on oxide thermally grown on
  • Keywords
    Annealing; Metallization; Optical device fabrication; P-n junctions; Pulsed laser deposition; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor lasers; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25382
  • Filename
    1481866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077513