• DocumentCode
    1077558
  • Title

    GaAs Shallow-homojunction solar cells on Ge-coated Si substrates

  • Author

    Gale, R.P. ; Fan, J.C.C. ; Tsaur, B-Y. ; Turner, G.W. ; Davis, F.M.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    2
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    169
  • Lastpage
    171
  • Abstract
    Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize an n+/p/p+shallow-homo junction GaAs structure on a thin (<0.2 µm) epitaxial Ge layer. These solar cells are the first reported GaAs devices fabricated on Si substrates.
  • Keywords
    Chemical vapor deposition; Circuits; Costs; Fabrication; Gallium arsenide; Lattices; Photovoltaic cells; Sheet materials; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25386
  • Filename
    1481870
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077558