• DocumentCode
    1077598
  • Title

    Voltage controlled attenuators using field effect transistors

  • Author

    Gosling, W.

  • Author_Institution
    University College of Swansea, S.E. Wales
  • Issue
    5
  • fYear
    1965
  • Firstpage
    112
  • Lastpage
    120
  • Abstract
    A FET operated so that channel pinch-off is avoided behaves like a voltage controlled variable resistor. This paper considers a "voltage divider" attenuator using the device in this way. Attenuation (in decibels) varies almost linearly with control voltage over a range. Distortion may be less than 0.01 percent, temperature effects are usually negligible, and the network can operate satisfactorily up to a few megahertz. Circuits of this kind demand a FET having special characteristics.
  • Keywords
    Attenuation; Attenuators; Circuits; FETs; Noise generators; Resistors; Signal generators; Signal to noise ratio; Temperature; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Audio, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-1620
  • Type

    jour

  • DOI
    10.1109/TAU.1965.1161818
  • Filename
    1161818