Ge3N4-InP MIS structures

MIS structures were fabricated by the low temperature pyrolytic deposition of Ge3N4on n-InP. The interface characteristics of the devices were found to depend on Ge3N4deposition parameters. For optimum deposition conditions, C-V and G-V measurements suggest the presence of an average interface state density of (2-4-) × 10¹¹cm^-2ev^-1with a time constant of 8 µs. No major hysteresis was observed in the C-V plot and the data indicates some inversion charge build-up under the application of large negative bias which could be useful for the fabrication of inversion mode MISFET´s.