• DocumentCode
    1077674
  • Title

    Resistivity increase in MBE Ga0.47In0.53As following ion bombardment

  • Author

    Barnard, J. ; Wood, C.E.C. ; Eastman, L.F.

  • Author_Institution
    Cornell University, Ithaca, New York
  • Volume
    2
  • Issue
    8
  • fYear
    1981
  • fDate
    8/1/1981 12:00:00 AM
  • Firstpage
    193
  • Lastpage
    195
  • Abstract
    Resistivity increase was compared following various doses of different 100 kV ions implanted into Ga0.47In0.53As. The largest resistivity increase of n-type Ge doped GaInAs resulted from a boron ion implant, and increased to a total of 280 times the original resistivity after heating for 15 minutes at 200°C. Boron ion bombardment can be used to isolate devices in a planar GaInAs integrated circuit process.
  • Keywords
    Boron; Conductivity; DH-HEMTs; Detectors; Indium phosphide; MESFETs; MOSFET circuits; Metallization; Molecular beam epitaxial growth; Resists;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25398
  • Filename
    1481882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077674