Title :
Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K
Author :
Schmidt, P.E. ; Octavio, M. ; Esqueda, P.D.
Author_Institution :
Instituto Venezolano de Investigaciones Científicas, Caracas, Venezuela
fDate :
8/1/1981 12:00:00 AM
Abstract :
Single-carrier space-charge controlled in n+n n+GaAs structures at 77°K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the "ballistic" transport theory.
Keywords :
Ballistic transport; Costs; Electrons; Gallium arsenide; Glass; III-V semiconductor materials; Photovoltaic cells; Physics; Reflection; Wavelength conversion;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25403
