Gate current dependence of low-frequency noise in GaAs MESFET´S

Characteristics of low-frequency noise generators in ion-implanted GaAs MESFET´s on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and 1/f²types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of electrons into deep level defects and their subsequent thermal emission to the conduction band.