• DocumentCode
    1077745
  • Title

    Gate current dependence of low-frequency noise in GaAs MESFET´S

  • Author

    Das, M.D. ; Ghosh, P.K.

  • Author_Institution
    The Pennsylvania State University, University Park, PA
  • Volume
    2
  • Issue
    8
  • fYear
    1981
  • fDate
    8/1/1981 12:00:00 AM
  • Firstpage
    210
  • Lastpage
    213
  • Abstract
    Characteristics of low-frequency noise generators in ion-implanted GaAs MESFET´s on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and 1/f2types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of electrons into deep level defects and their subsequent thermal emission to the conduction band.
  • Keywords
    Character generation; Electron emission; Frequency measurement; Gallium arsenide; Leakage current; Low-frequency noise; MESFETs; Noise measurement; Thermal conductivity; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25405
  • Filename
    1481889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077745