DocumentCode :
1077790
Title :
High-voltage, large-area planar devices
Author :
Selim, F.A.
Author_Institution :
Westinghouse Research and Development Center, Pittsburgh, Pennsylvania
Volume :
2
Issue :
9
fYear :
1981
fDate :
9/1/1981 12:00:00 AM
Firstpage :
219
Lastpage :
221
Abstract :
By using basic elements of planar technology, a process and design for manufacturing 2-inch diameter rectifiers with up to 8.0 kV blocking voltage capability is presented. The diode structure used has a field plate overlay, a metallic equipotential ring (EQR), and a layer of resistive polycrystalline silicon film over the oxide and between the field plate and EQR electrodes. The results of this work offer new methods for fabricating power devices with higher blocking voltages than the traditional etched mesa devices.
Keywords :
Diodes; Electrodes; Etching; P-n junctions; Rectifiers; Semiconductor films; Silicon; Surface contamination; Temperature control; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25410
Filename :
1481894
Link To Document :
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