Title :
Frequency response theory for multilayer photodiodes
Author :
Hollenhorst, James N.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
An exact solution is developed for the frequency response of photodiodes composed of multiple spatially uniform layers. Each layer is analyzed separately to obtain a set of linear response coefficients. The response of the multilayer diodes is calculated using matrix algebra. Effects of carrier transit, electron and hole trapping, avalanche decay, and finite absorption length are included in the analysis. The results of R.B. Emmons (1967) and G. Lucovsky et al. (1958) for avalanche photodiodes (APDs) and p-i-n´s, respectively, are obtained as special cases. The theory is illustrated by applying it to the separated absorption and multiplication
Keywords :
avalanche photodiodes; electron traps; hole traps; matrix algebra; p-i-n diodes; avalanche decay; avalanche photodiodes; carrier transit; electron trapping; finite absorption length; frequency response; frequency response time; hole trapping; linear response coefficients; matrix algebra; multilayer photodiodes; multiple spatially uniform layers; multiplication; p-i-n; Absorption; Bit rate; Charge carrier processes; Communication systems; Electron mobility; Frequency response; Matrices; Nonhomogeneous media; P-i-n diodes; Photodiodes;
Journal_Title :
Lightwave Technology, Journal of
