DocumentCode
1077856
Title
Low-cost power amplifiers with silicon transistors
Author
Jones, Dwight V.
Author_Institution
General Electric Company, Syracuse, NY, USA
Volume
14
Issue
1
fYear
1966
fDate
3/1/1966 12:00:00 AM
Firstpage
40
Lastpage
42
Abstract
Characteristics of silicon and germanium power transistors used in power output stages of audio amplifiers are discussed. The higher junction temperature and lower ICBO of silicon are the major advantages. A high-voltage class A audio amplifier with the advantages of a direct-coupled drive circuit is discussed. Low-cost semiconductors are used to replace electrolytic capacitors. The advantages of transformerless push-pull circuits and capacitive vs. direct coupling to the load are also discussed. Both
-watt and 20-watt circuits are described and shown to give high performance and to protect the output transistors against overdrive.
-watt and 20-watt circuits are described and shown to give high performance and to protect the output transistors against overdrive.Keywords
Capacitors; Circuits; Costs; Germanium; Impedance; Power amplifiers; Silicon; TV; Temperature; Voltage;
fLanguage
English
Journal_Title
Audio and Electroacoustics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9278
Type
jour
DOI
10.1109/TAU.1966.1161842
Filename
1161842
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