DocumentCode :
1077856
Title :
Low-cost power amplifiers with silicon transistors
Author :
Jones, Dwight V.
Author_Institution :
General Electric Company, Syracuse, NY, USA
Volume :
14
Issue :
1
fYear :
1966
fDate :
3/1/1966 12:00:00 AM
Firstpage :
40
Lastpage :
42
Abstract :
Characteristics of silicon and germanium power transistors used in power output stages of audio amplifiers are discussed. The higher junction temperature and lower ICBOof silicon are the major advantages. A high-voltage class A audio amplifier with the advantages of a direct-coupled drive circuit is discussed. Low-cost semiconductors are used to replace electrolytic capacitors. The advantages of transformerless push-pull circuits and capacitive vs. direct coupling to the load are also discussed. Both 2frac{1}{2} -watt and 20-watt circuits are described and shown to give high performance and to protect the output transistors against overdrive.
Keywords :
Capacitors; Circuits; Costs; Germanium; Impedance; Power amplifiers; Silicon; TV; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Audio and Electroacoustics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9278
Type :
jour
DOI :
10.1109/TAU.1966.1161842
Filename :
1161842
Link To Document :
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