• DocumentCode
    1077856
  • Title

    Low-cost power amplifiers with silicon transistors

  • Author

    Jones, Dwight V.

  • Author_Institution
    General Electric Company, Syracuse, NY, USA
  • Volume
    14
  • Issue
    1
  • fYear
    1966
  • fDate
    3/1/1966 12:00:00 AM
  • Firstpage
    40
  • Lastpage
    42
  • Abstract
    Characteristics of silicon and germanium power transistors used in power output stages of audio amplifiers are discussed. The higher junction temperature and lower ICBOof silicon are the major advantages. A high-voltage class A audio amplifier with the advantages of a direct-coupled drive circuit is discussed. Low-cost semiconductors are used to replace electrolytic capacitors. The advantages of transformerless push-pull circuits and capacitive vs. direct coupling to the load are also discussed. Both 2frac{1}{2} -watt and 20-watt circuits are described and shown to give high performance and to protect the output transistors against overdrive.
  • Keywords
    Capacitors; Circuits; Costs; Germanium; Impedance; Power amplifiers; Silicon; TV; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Audio and Electroacoustics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9278
  • Type

    jour

  • DOI
    10.1109/TAU.1966.1161842
  • Filename
    1161842