Title :
2.3 μm type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W
Author :
Donetsky, D. ; Kipshidze, G. ; Shterengas, L. ; Hosoda, T. ; Belenky, G.
Author_Institution :
SUNY at Stony Brook, Stony Brook
Abstract :
Improvement of the output parameters of 2.3 mum GaSb-based laser diodes was observed with increase of the quantum-well compressive strain. A continuous-wave (CW) power of 1.15 W and quasi-CW power of 1.4 W were obtained at room temperature from 2 mm-long single emitters with a 100 mum-aperture.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; GaInAsSb-AlGaAsSb-GaSb; continuous-wave power; power 1.4 W; quantum well laser diodes; quantum-well compressive strain; quasi-CW output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071320
