Title :
Gunn oscillation in GaAs optically triggered by 1.06 µm radiation
Author :
Chin, R. ; Nakano, K. ; Coleman, J.J. ; Dapkus, P.D.
Author_Institution :
Rockwell International Center, Thousand Oaks, CA
fDate :
10/1/1981 12:00:00 AM
Abstract :
Gunn oscillation triggered by 1.06 µm radiation in an MO-CVD grown GaAlAs-GaAs heterostructure is reported. In these devices, oscillations were found to occur in two separate ranges of bias voltage. The frequency of operation as well as the probability of the initiation of oscillation were found to be dependent upon the excitation beam location.
Keywords :
Frequency; Gallium arsenide; Gunn devices; MOCVD; Optical buffering; Optical devices; Optical harmonic generation; Optical pulses; Optical variables control; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25420
