• DocumentCode
    1077923
  • Title

    Laser recrystallized polysilicon on SiO2for high performance resistors

  • Author

    Shah, R.R. ; Hollingsworth, D.R. ; Crosthwait, D.L.

  • Author_Institution
    Texas Instruments Inc., Dallas, TX
  • Volume
    2
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    254
  • Lastpage
    256
  • Abstract
    We demonstrate, for the first time, a technique for the fabrication of polysilicon resistors with excellent control and temperature characteristics: a standard deviation of 2.5 Ω and temperature variation of -5.6% from 25° to 125°C for 1.96 K Ω, 4.5 × 1014cm-2Boron implanted polysilicon resistors. The technique is based on fabricating resistors in laser recrystallized polysilicon on SiO2. Resistor performance is compared to that of similar resistors fabricated in standard LPCVD polysilicon and in single crystal silicon.
  • Keywords
    Annealing; Electrical resistance measurement; Etching; Laser modes; Laser theory; Measurement standards; Oxidation; Resistors; Silicon; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25423
  • Filename
    1481907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077923