Magnetotransconductance mobility measurements of GaAs MESFET´s

It is demonstrated that the magnetic field dependence of the transconductance of short-gate GaAs FET´s provides a direct means of characterizing the mobility profile of the active layer of the device, which does not require a capacitance measurement, and which is relatively insensitive to the parasitic series resistance associated with the source and drain contacts. The results are shown to be in agreement with those obtained from conventional measurements on a long-gate FET test structure.