DocumentCode :
1077971
Title :
Detailed performance characteristics of hybrid InP-InGaAsP APD´s
Author :
Yeats, R. ; Von Dessonneck, K.
Author_Institution :
Varian Associates, Inc., Palo Alto, CA
Volume :
2
Issue :
10
fYear :
1981
fDate :
10/1/1981 12:00:00 AM
Firstpage :
268
Lastpage :
271
Abstract :
Detailed performance characteristics of hybrid InP-InGaAsP APD\´s having negligible dark current (ID < 6 nA at M = 30) are reported. The excess noise factor F is found to be given by F/M ≈ const ≈ 0.42 ± 0.10 for gains in the range 5 ≤ M ≤ 35. The breakdown voltage increases with temperature according to Δ 
/ΔT = 1.0 × 10-3/°C. The dark current near breakdown doubles every 15°C. Sub-nanosecond rise times are observed, however, fall times are extended to ∼3 nsec by a diffusion tail that will be difficult to completely eliminate.
/ΔT = 1.0 × 10-3/°C. The dark current near breakdown doubles every 15°C. Sub-nanosecond rise times are observed, however, fall times are extended to ∼3 nsec by a diffusion tail that will be difficult to completely eliminate.Keywords :
Breakdown voltage; Capacitance; Dark current; Indium phosphide; Leakage current; Optical fibers; Packaging; Substrates; Temperature; Thermal conductivity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25428
Filename :
1481912
Link To Document :
