Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

Author

Zhong, H. ; Tyagi, A. ; Fellows, N.N. ; Chung, R.B. ; Saito, M. ; Fujito, K. ; Speck, J.S. ; DenBaars, S.P. ; Nakamura, S.

Author_Institution

Univ. of California, Santa Barbara

Volume

43

Issue

15

fYear

2007

Firstpage

825

Lastpage

826

Abstract

Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480 nm were grown on low extended defect density semipolar (1122) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 18% and 9 mW, respectively. The device exhibited small electroluminescence wavelength shift (4.5 nm) with drive currents ranging from 30 to 100 mA, indicating significant reduction of polarisation-related internal electric fields.

Keywords

chemical vapour deposition; light emitting diodes; quantum well devices; substrates; InGaN-GaN; blue-green InGaN/GaN multiple-quantum-well light emitting diodes; electroluminescence wavelength shift; external quantum efficiency; high power blue-green light emitting diode; low extended defect density semipolar bulk GaN substrates; metal organic chemical vapour deposition; polarisation-related internal electric fields;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20071323

Filename

4278458