DocumentCode :
107799
Title :
High Optical Power Density Forward-Biased Silicon LEDs in Standard CMOS Process
Author :
Rong Xie ; Luhong Mao ; Weilian Guo ; Sheng Xie ; Shilin Zhang ; Lei Han ; Fan Zhao
Author_Institution :
Dept. of Electron. & Inf. Eng., Tianjin Univ., Tianjin, China
Volume :
27
Issue :
2
fYear :
2015
fDate :
Jan.15, 15 2015
Firstpage :
121
Lastpage :
124
Abstract :
This letter presents three low-operating-voltage silicon-based light-emitting devices (Si-LEDs) designed and made in a commercial standard 0.18-μm CMOS process without any modification. The Si-LEDs with a new threeterminal and wedge-shaped forward-biased carrier-injection-type p+-n junction structure, have high optical powers. The output power increases by two orders of magnitude up to 1.78 μW without saturation when the forward current is increased from 20 mA to 200 mA. The light-emitting area is the n-type drift region between the n+ region and p+ region. When the forward current increases to 200 mA, the optical power density exceeds 30 nW · μm-2 the power conversion efficiency and external quantum efficiency are ~2 × 10-6 and 8.3 × 10-6, respectively, higher than all other forward-biased Si-LEDs previously reported to have used CMOS processes without any modification.
Keywords :
light emitting diodes; low-power electronics; optical materials; p-n junctions; silicon; Si; commercial standard CMOS process; current 20 mA to 200 mA; external quantum efficiency; forward current; forward-biased Si-LED; high optical power density forward-biased silicon LED; light-emitting area; low-operating-voltage silicon-based light-emitting devices; n-type drift region; n+ region; output power; p+ region; power 1.78 muW; power conversion efficiency; terminal; wedge-shaped forward-biased carrier-injection-type p+-n junction structure; Density measurement; Electric fields; Junctions; Light emitting diodes; Optical saturation; Silicon; Stimulated emission; Complementary metal-oxide-semiconductor (CMOS) process without any modification; forward-biased carrier-injection-type; optical power density; p+-n junction; silicon-based light-emitting devices (Si-LEDs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2362983
Filename :
6923455
Link To Document :
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