DocumentCode
1077996
Title
Sheet resistance-junction depth relationships in implanted arsenic diffusion
Author
Liu, T.M. ; Oldham, W.G.
Author_Institution
University of California, Berkeley, CA
Volume
2
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
275
Lastpage
277
Abstract
A design graph for arsenic diffusion has been constructed based on a Chebyshev polynomial approximation of the arsenic implantation/diffusion profile. Systematic experiments of arsenic implantation/ diffusion were done to support the design graph. The ultimate limitations of arsenic shallow junction design are defined.
Keywords
Boron; Chebyshev approximation; Diffusion processes; Doping profiles; Implants; Polynomials; Silicon; Surface resistance; Tail; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25430
Filename
1481914
Link To Document