• DocumentCode
    1078031
  • Title

    Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes

  • Author

    Forrest, S.R. ; Camlibel, I. ; Kim, O.K. ; Stocker, H.J. ; Zuber, J.R.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    2
  • Issue
    11
  • fYear
    1981
  • fDate
    11/1/1981 12:00:00 AM
  • Firstpage
    283
  • Lastpage
    285
  • Abstract
    We have fabricated high quantum efficiency, high speed, low dark-current In0.53Ga0.47As/InP p-i-n planar photodiodes Which meet the performance requirements of long-wavelength optical communications systems. The diodes employ plasma deposited SiNxas a mask to Zn diffusion. The dark-current density at 10 V is J = 5 × 10-5A/cm2with a corresponding capacitance of C = 5 × 10-9F/cm2.
  • Keywords
    Capacitance; Dark current; Indium phosphide; Inorganic materials; P-i-n diodes; PIN photodiodes; Photodetectors; Silicon compounds; Voltage; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25434
  • Filename
    1481918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078031